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1

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

R. Khlil, A. El Hdiy, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

2

Threshold energies in the light emission characteristics of silicon MOS tunnel diodes

N. Asli, M.I. Vexler, A.F. Shulekin, P.D. Yoder, I.V. Grekhov, P. Seegebrecht

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 428 KB

english, 2001

3

The post-damage behavior of a MOS tunnel emitter transistor

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 568 KB

english, 2006

4

Multicascade impact ionization in Si metal-insulator-semiconductor tunnel emitter auger transistor (Si mis teat)

I.V. Grekhov, A.F. Shulekin, M.I. Vexler

Journal:

Solid State Communications

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

5

Silicon Auger transistor—New insight into the performance of a tunnel MIS emitter transistor

I.V Grekhov, A.F Shulekin, M.I Vexler

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 959 KB

english, 1995

6

Band-to-band tunneling related effects in a thin MOS structure

M.I Vexler, A.F Shulekin, D Grgec, I.V Grekhov, B Meinerzhagen

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

7

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 319 KB

english, 2006

8

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

M.I. Vexler, A. El Hdiy, D. Grgec, S.E. Tyaginov, R. Khlil, B. Meinerzhagen, A.F. Shulekin, I.V. Grekhov

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

9

Impact of oxide damage on the light emission properties of MOS tunnel structures

N. Asli, A.F. Shulekin, P.D. Yoder, M.I. Vexler, I.V. Grekhov, P. Seegebrecht

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 325 KB

english, 2004

10

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

S.E. Tyaginov, M.I. Vexler, A.F. Shulekin, I.V. Grekhov

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 361 KB

english, 2005

11

Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 K

I.V Grekhov, K Schmalz, A.F Shulekin, K Tittelbach-Helmrich, M.I Vexler

Journal:

Year:

1998

Language:

english

File:

PDF, 296 KB

english, 1998

12

Current model considering oxide thickness non-uniformity in a MOS tunnel structure

M.I. Vexler, A.F. Shulekin, Ch. Dieker, V. Zaporojtschenko, H. Zimmermann, W. Jäger, I.V. Grekhov, P. Seegebrecht

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 275 KB

english, 2001

13

Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

A. El Hdiy, R. Khlil, Dj. Ziane, I.V. Grekhov, A.F. Shulekin, M.I. Vexler

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

14

Concepts of light emission from a silicon MOS tunnel emitter Auger transistor

I.V. Grekhov, A.F. Shulekin, M.I. Vexler, H. Zimmermann

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 398 KB

english, 1999

15

Non-one-dimensional effects in tunnel MOS devices

S.V. Belov, M.I. Vexler, I.V. Grekhov, A.F. Shulekin

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 207 KB

1997

16

Compact quantum model for a silicon MOS tunnel diode

M.I. Vexler, N. Asli, A.F. Shulekin, B. Meinerzhagen, P. Seegebrecht

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 180 KB

english, 2001

17

Al/SiO2(2.0–2.5 nm)/p-Si tunnel junction as a light emitter

N. Asli, S.V. Gastev, I.V. Grekhov, P. Seegebrecht, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler, H. Zimmermann

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 298 KB

english, 1999

18

Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

N. Asli, S.V. Gastev, I.V. Grekhov, P. Seegebrecht, A.F. Shulekin, S.E. Tyaginov, M.I. Vexler, H. Zimmermann

Journal:

Materials Science in Semiconductor Processing

Year:

2000

Language:

english

File:

PDF, 143 KB

english, 2000

19

Performance of automatic reactor-power control system of the first atomic power plant with correction signals derived from in-reactor transducers

P. T. Potapenko, V. N. Sarylov, F. F. Voskresenskii, V. G. Dunaev, A. P. Shulekin

Journal:

Year:

1980

Language:

english

File:

PDF, 225 KB

english, 1980

20

Degradation of MOS tunnel structures at high current density

I. V. Grekhov, A. F. Shulekin, M. I. Veksler

Journal:

Year:

1998

Language:

english

File:

PDF, 91 KB

english, 1998

21

Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator

I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, A. F. Shulekin

Journal:

Year:

1998

Language:

english

File:

PDF, 51 KB

english, 1998

22

The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures

M. I. Vexler, I. V. Grekhov, A. F. Shulekin

Journal:

Year:

2000

Language:

english

File:

PDF, 86 KB

english, 2000

23

Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure

G. G. Kareva, M. I. Vexler, I. V. Grekhov, A. F. Shulekin

Journal:

Year:

2002

Language:

english

File:

PDF, 89 KB

english, 2002

24

Soft breakdown as a cause of current drop in an MOS tunnel structure

A. F. Shulekin, S. É. Tyaginov, R. Khlil, A. El Hdiy, M. I. Vexler

Journal:

Year:

2004

Language:

english

File:

PDF, 54 KB

english, 2004

25

Radiative recombination in a silicon MOS tunnel structure

N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, A. F. Shulekin

Journal:

Year:

2004

Language:

english

File:

PDF, 97 KB

english, 2004

26

Influence of the insulator thickness inhomogeneity on the current-voltage characteristics of tunneling MOS structures

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Journal:

Technical Physics Letters

Year:

2004

Language:

english

File:

PDF, 50 KB

english, 2004

27

Luminescence intensity monitoring in a MOS tunnel structure with inhomogeneous thickness of the insulator

S. E. Tyaginov, N. Asli, M. I. Vexler, A. F. Shulekin, P. Seegebrecht, I. V. Grekhov

Journal:

Technical Physics Letters

Year:

2005

Language:

english

File:

PDF, 57 KB

english, 2005

28

On the effect of transverse quantum confinement on the electrical characteristics of a submicrometer-sized tunnel MOS structure

M. I. Vexler, I. V. Grekhov, A. F. Shulekin

Journal:

Year:

2005

Language:

english

File:

PDF, 96 KB

english, 2005

29

Influence of insulator thickness nonuniformity on the switching of the Al/SiO2/n-Si tunnel MOS structure at reverse bias

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Journal:

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

30

A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

M. I. Vexler, S. É. Tyaginov, A. F. Shulekin

Journal:

Year:

2006

Language:

english

File:

PDF, 197 KB

english, 2006

31

Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

M. I. Vexler, S. E. Tyaginov, A. F. Shulekin, I. V. Grekhov

Journal:

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

32

Degradation of tunnel-thin silicon dioxide films

Grekhov, I.V., Shulekin, A.F., Vexler, M.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 55 KB

english, 1997

33

SiC-based phototransistor with a tunnel MOS emitter

Grekhov, I.V., Ivanov, P.A., Samsonova, T.P., Shulekin, A.F., Vexler, M.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 110 KB

english, 1999

34

A gate controlled switch delay p-n-p-n device-forvistor

Grekhov, I.V., Kurakina, D.I., Liniychuk, I.A., Shulekin, A.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1976

Language:

english

File:

PDF, 223 KB

english, 1976

35

Minority carriers contribution and hot-electron injection process in tunnel spectroscopy of H-passivated silicon surfaces

L.N. Bolotov, I.V. Makarenko, A.F. Shulekin, A.N. Titkov

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 384 KB

english, 1995

36

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Vexler, M I, Tyaginov, S E, Shulekin, A F

Journal:

Journal of Physics Condensed Matter

Year:

2005

Language:

english

File:

PDF, 690 KB

english, 2005

37

Luminescence spectra of an Al∕SiO[sub 2]∕p-Si tunnel metal-oxide-semiconductor structure

Yoder, P. D., Vexler, M. I., Shulekin, A. F., Asli, N., Gastev, S. V., Grekhov, I. V., Seegebrecht, P., Tyaginov, S. E., Zimmermann, H.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 368 KB

english, 2005

38

Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates at T = 300 K

Shulekin, A F, Vexler, M I, Zimmermann, H

Journal:

Semiconductor Science and Technology

Year:

1999

Language:

english

File:

PDF, 273 KB

english, 1999

39

[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Optimization of the silicon-based tunnel MIS structures as hot electron injectors

Grekhov, I.V., Shulekin, A.F., Vexler, M.I.

Year:

1996

Language:

english

File:

PDF, 355 KB

english, 1996

40

[IEEE IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) - Portland, OR, USA (30 July-3 Aug. 1995)] IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) - Optical controlled Auger transistor on a base of the STM tunnel contact with H-terminated n-Si surface

Bolotov, L.N., Makarenko, I.V., Shulekin, A.F., Titkov, A.N.

Year:

1995

Language:

english

File:

PDF, 79 KB

english, 1995

41

[IRE 1975 International Electron Devices Meeting - ()] 1975 International Electron Devices Meeting - Gate-current-controlled plasma-coupled linear pnpn-devices

Grekhov, I.V., Linitchuk, I.A., Shulekin, A.E., Tuchkevich, V.M.

Year:

1975

Language:

english

File:

PDF, 240 KB

english, 1975

42

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

El Hdiy, A., Khlil, R., Jin, Y., Tyaginov, S. E., Shulekin, A. F., Vexler, M. I.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 346 KB

english, 2005

43

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Overview of luminescence from MOS tunnel devices

Asli, N., Shulekin, A.F., Yoder, P.D., Vexler, M.I., Grekhov, I.V., Seegebrecht, P.

Year:

2003

Language:

english

File:

PDF, 285 KB

english, 2003

44

[IEEE 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA (19-21 June 1995)] 1995 53rd Annual Device Research Conference Digest - Optimization of the tunnel MIS structure as a hot electron injector

Grekhov, I.V., Shulekin, A.F., Vexler, M.I.

Year:

1995

File:

PDF, 206 KB

1995

45

Switching of the emission wavelengths of a copper vapor laser

S. A. Zenchenko, V. I. Ivanov, I. A. Malevich, S. F. Shulekin

Year:

1985

Language:

english

File:

PDF, 217 KB

english, 1985

46

Measurement of the near-threshold Auger ionization probability in silicon

I. V. Grekhov, A. F. Shulekin, M. I. Vexler

Year:

1995

Language:

english

File:

PDF, 279 KB

english, 1995

47

[IEEE 1997 21st International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 Sept. 1997)] 1997 21st International Conference on Microelectronics. Proceedings - Visible hot electron electroluminescence from Si in tunnel MIS junction

Grekhov, I.V., Shulekin, A.F., Vexler, M.I.

Year:

1997

Language:

english

File:

PDF, 415 KB

english, 1997

48

Hot-electron-induced luminescence of metal oxide-semiconductor tunnel devices

Asli, N, Vexler, M I, Shulekin, A F, Seegebrecht, P

Journal:

Semiconductor Science and Technology

Year:

2003

Language:

english

File:

PDF, 178 KB

english, 2003

49

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Resonant tunneling metal-oxide-silicon nanostructure

Kareva, Galina G., Vexler, M. I., Grekhov, I., Shulekin, A. F., Alferov, Zhores I., Esaki, Leo

Year:

2012

Language:

english

File:

PDF, 82 KB

english, 2012